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New research page on 2D materials
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_data/citations.yaml

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# DO NOT EDIT, GENERATED AUTOMATICALLY
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- id: doi:10.1088/1361-648X/ae0be1
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title: Future of condensed matter physics for the next 10 years<sup>*</sup>
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title: Future of Condensed Matter Physics for the Next 10 Years
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authors:
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- Jonathan Bird
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- Jonathan P Bird
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- Jinguang Cheng
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- Chun-Gang Duan
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- Chun-gang Duan
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- Thomas Frederiksen
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- Gerhard Kahl
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- Gianfranco Pacchioni
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- Je-Geun Park
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- Talat S Rahman
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- Talat S. Rahman
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- Steven R Schofield
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- Krishnendu Sengupta
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- Xiaoshan Xu
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- Jin Zhao
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- Peter A Dowben
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publisher: 'Journal of Physics: Condensed Matter'
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date: '2025-10-20'
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date: '2025-09-25'
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link: https://doi.org/g944bs
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orcid: 0000-0002-0727-3015
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plugin: sources.py
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into CDW formation mechanisms.
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image: /images/publications/images_large_nl1c00677_0005.jpg
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quantumstateimaging: true
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twodmaterials: true
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- id: doi:10.1088/1361-648X/ABE6DD
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title: Determination of the preferred reaction pathway of acetophenone on Si(001)
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using photoelectron diffraction
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file: sources.yaml
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type: paper
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quantumstateimaging: true
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twodmaterials: true
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image: /images/publications/jp1c07115_0005.webp
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- id: doi:10.1016/J.APSUSC.2021.149961
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title: The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale
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file: sources.yaml
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type: paper
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image: /images/publications/41467_2011_Article_BFncomms1574_Fig3_HTML.jpg.webp
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twodmaterials: true
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- id: doi:10.1063/1.3551618
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title: "Dimer pinning and the assignment of semiconductor\u2013adsorbate surface\
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\ structures"

_data/research.yaml

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in semiconductors and lays the foundation for atomic-scale electronic devices.
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- title: Two-dimensional (2D) Materials
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subtitle: Quantum states, defects, and correlated phases in atomically thin systems
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group: research
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image: images/research/twodmaterials/cac6.jpg
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link: /research/2d-materials/
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description: >
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We use low-temperature STM/STS to identify and manipulate atomic-scale defects in
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two-dimensional materials. Our work spans the imaging of substitutional impurities,
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mapping of hydrogenic defect states, and the discovery of emergent phases such as
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charge density waves in heavily electron-doped MoS₂.
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# tags:
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# - electronic-structure

_data/sources.yaml

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description: This paper reports the first observation of a charge density wave ground state in a semiconducting transition metal dichalcogenide, providing new insight into CDW formation mechanisms.
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image: /images/publications/images_large_nl1c00677_0005.jpg
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quantumstateimaging: true
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twodmaterials: true
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- id: doi:10.1103/PHYSREVLETT.91.136104
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type: paper
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- id: doi:10.1021/ACS.JPCC.1C07115
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type: paper
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quantumstateimaging: true
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twodmaterials: true
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image: /images/publications/jp1c07115_0005.webp
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- id: doi:10.1088/1361-648X/ABE6DD
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- id: doi:10.1038/NCOMMS1574
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type: paper
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image: /images/publications/41467_2011_Article_BFncomms1574_Fig3_HTML.jpg.webp
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twodmaterials: true
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- id: doi:10.1063/1.4884654
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type: paper
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image: /images/publications/253102_1_f3.jpeg
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research/index.md

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scanning tunnelling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES),
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and the theory of defects and dopants in semiconductors and 2D materials.
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This page will gradually collect short summaries of our main research themes together with
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This page presnts short summaries of our main research themes together with
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selected talks and presentations.
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{% include list.html component="card" data="research" filter="group == 'research'" %}
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{% include list.html component="card" data="research" filter="group == 'moreresearch'" style="small" %}
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<!-- {% include list.html component="card" data="research" filter="group == 'moreresearch'" style="small" %} -->
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{% include section.html %}
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<a id="presentations"></a>
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## Research Presentations
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{% include list.html component="card" data="presentations" filter="group == 'schofield'" %}
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---
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title: Two-dimensional (2D) Materials
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permalink: /research/2d-materials/
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layout: default
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topic_id: two-dimensional-materials
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---
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## Two-dimensional (2D) materials
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Two-dimensional materials provide a highly tunable platform for studying quantum
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states and defect physics at the atomic scale. Their reduced dimensionality,
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weak dielectric screening, and strong many-body interactions give rise to rich
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electronic behaviour that can be accessed and controlled with scanning
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tunnelling microscopy (STM).
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We use ultrahigh-vacuum, low-temperature STM/STS to:
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- identify and characterise intrinsic and extrinsic point defects in 2D materials
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- map real-space electronic structure with atomic resolution
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- quantify donor-, acceptor-, and mid-gap defect states
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- engineer chemical substitution, doping, and charge environments
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- investigate collective electronic phases such as charge density waves
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These approaches allow us to understand and manipulate the electronic structure
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of 2D materials one atom at a time.
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---
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## Atomic-scale defects and extended quantum states in 2D materials
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Defects in 2D systems—whether substitutional impurities or vacancies—play an
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outsized role in determining local band structure, carrier density, and optical
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and transport properties. Our STM studies reveal their real-space structure and
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electronic signatures, providing insight relevant to quantum technologies and
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two-dimensional optoelectronic devices.
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One long-standing question concerns the origin of p-type behaviour in nominally
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undoped black phosphorus. Using STM/STS combined with density functional theory
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calculations performed by [Prof. Alex Shluger](https://www.ucl.ac.uk/mathematical-physical-sciences/physics-astronomy/research/research-groups/condensed-matter-material-physics-cmmp/research/alexander-shluger-group) and his group, we showed that ultra-low concentrations of substitutional tin impurities
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are present in typical samples. These impurities are difficult to detect using
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conventional methods but are readily identifiable in STM.
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![Substitutional Sn acceptor in black phosphorus](/images/research/twodmaterials/black_phosphorus.jpg){: style="display:block; margin-left:auto; margin-right:auto; max-width:65%;" }
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*Figure 1: STM image of atomic-point defects in black phosphorus, identified as substitutional Sn impurities.
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The extended, anisotropic acceptor-like wave function is characteristic of the shallow hydrogenic
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bound state ([J. Phys. Chem. C 2021, 125, 41, 22883–22889](https://pubs.acs.org/doi/10.1021/acs.jpcc.1c07115)).*
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{: style="text-align:center; color:#555; font-size:0.9rem;"}
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Each Sn impurity produces a spatially extended, anisotropic acceptor-like
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hydrogenic state, visible as a characteristic lobed feature in STM topographs.
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The defect arises from a tin atom substituting at a phosphorus site, introducing
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a local perturbation to the electronic structure that binds a hole.
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This work established a clear connection between atomic structure and
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defect-induced electronic properties in black phosphorus, resolving several
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earlier ambiguities regarding its intrinsic defect landscape.
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---
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## Charge density waves in 2D materials
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Transition-metal dichalcogenides (TMDs) exhibit strong electron correlations and
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can host emergent phases under doping. By intercalating charged ions into the vdW gaps, in collaboration with [Prof. Chris Howard](https://www.linkedin.com/in/chris-howard-a33a3521b)'s group at UCL, and measuring with STM/STS, we obtained the first atomic-scale evidence for a charge density wave (CDW) in heavily electron-doped MoS₂ and CaC₆.
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Excess charge, introduced via interstitial dopants, drives the
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formation of an ordered modulation of the electronic density. STM images show a
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clear periodic modulation superimposed on the surface atoms lattice, and spectroscopy
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reveals a partial gap opening consistent with CDW formation.
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![Charge density wave in electron-doped MoS2](/images/research/twodmaterials/mos2.jpg){: style="display:block; margin-left:auto; margin-right:auto; max-width:80%;" }
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*Figure 2: Heavily electron-doped MoS₂ formed by potassium intercalation into the vdW gaps. Two separate CDW modulations are observed in cryogenic-temperature STM ([Nano Lett. 2021, 21, 5516–5521](https://pubs.acs.org/doi/10.1021/acs.nanolett.1c00677)).*
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{: style="text-align:center; color:#555; font-size:0.9rem;"}
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![Charge density wave in CaC6](/images/research/twodmaterials/cac6.jpg){: style="display:block; margin-left:auto; margin-right:auto; max-width:80%;" }
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*Figure 3: STM image of CDW modulation in CaC₆. ([Nature Communications 2, 558 (2011)](https://www.nature.com/articles/ncomms1574)).*
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{: style="text-align:center; color:#555; font-size:0.9rem;"}
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These studies highlight how controlled doping—whether intentional or
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defect-driven—can induce correlated phases in 2D semiconductors. They also
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demonstrate the ability of STM to directly visualise these emerging electronic
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orders. Unique to STM, we are also able to explore the role of individual defect states to the formation of these ordered phases, which was particularly relevant in the case of MoS₂ where two different modulations were found, one of them occuring only at defect sites.
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---
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## Selected publications
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{% assign all_citations = site.data.citations | default: empty %}
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{% assign twod_pubs = all_citations | where_exp: "c", "c.twodmaterials" %}
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{% for c in twod_pubs %}
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{% include citation.html
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affiliation=c.affiliation
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author=c.author
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authors=c.authors
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buttons=c.buttons
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caption=c.caption
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content=c.content
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date=c.date
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description=c.description
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excerpt=c.excerpt
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height=c.height
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icon=c.icon
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id=c.id
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image=c.image
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last_modified_at=c.last_modified_at
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link=c.link
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lookup=c.lookup
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name=c.name
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publisher=c.publisher
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repo=c.repo
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role=c.role
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slug=c.slug
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style="rich"
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subtitle=c.subtitle
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tags=c.tags
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text=c.text
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title=c.title
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tooltip=c.tooltip
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type=c.type
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url=c.url
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width=c.width
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%}
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{% endfor %}

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