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Electric field pulse modelling

"electricity is really just organized lightning" - George Carlin

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About the Project

During my Master's research project, we wished to model electric field pulses that could be applied to a semiconducting 2D material via a conducting STM tip . Previous work [1] [2] has shown that pulsing of this kind can change the magnetic domain structure of the material, leading the way for possible all-electrical manipulation of magnetic domains. This code plots data generated from COMSOL Multiphysics to show how the electric field intensity varies across the surface of the material.

Built With

Features

  • Plot in and out of plane electric field component as a function of distance across the substrate.
  • Calculate tip-sample distance with feedback on using the STM equation.

Screenshots

  • Schematic of the model used in this simulation. The Au substrate was set as grounded and a bias of 7V applied uniformly throughout the tip. A small distance (<0.5nm) is set between the tip and sample. STM geometry
  • Heat map of applied voltage. Tip-surface bias applied
  • Out of plane electric field component as function of distance across the monolayer ReS2 sample. Electric field plotted

Contact

Thomas Bourke - tb944@bath.ac.uk

References

[1] Zhang, Fan, Zhe Wang, Lixuan Liu, Anmin Nie, Yanxing Li, Yongji Gong, Wenguang Zhu, and Chenggang Tao. ‘Atomic-Scale Manipulation of Polar Domain Boundaries in Monolayer Ferroelectric In2Se3’. Nature Communications 15, no. 1 (24 January 2024): 718. https://doi.org/10.1038/s41467-023-44642-9.

[2] Chang, Kai, Felix Küster, Brandon J. Miller, Jing-Rong Ji, Jia-Lu Zhang, Paolo Sessi, Salvador Barraza-Lopez, and Stuart S. P. Parkin. ‘Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature’. Nano Letters 20, no. 9 (9 September 2020): 6590–97. https://doi.org/10.1021/acs.nanolett.0c02357.

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Modelling the electric field between a scanning tunnelling microscope (STM) tip and sample

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